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IXTA 2N80
IXTP 2N80
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-220 AD Dimensions
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 20 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
1.0
2.0
440
56
15
15
18
S
pF
pF
pF
ns
ns
t d(off)
t f
R G
= 18 ?, (External)
30
15
ns
ns
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
22
5.5
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Q gd
R thJC
12
2.3
nC
K/W
R thCK
(IXTP)
0.5
K/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
I S
I SM
V GS = 0 V
Repetitive; pulse width limited by T JM
2
8
A
A
V SD
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
1.8
V
TO-263 AA Outline
t rr
I F
= I S , -di/dt = 100 A/ μ s, V R = 100 V
510
ns
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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